In this report. we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1 1 1)A. The grown films are characterized by optical microscopy. atomic force microscopy. https://safeersappliancers.shop/product-category/hotpoint-class-4-du4541jcix-electric-built-under-double-oven-stainless-steel/